Electron mobility enhancement in metalorganic-vapor-phase-epitaxy-grown InAlN high-electron-mobility transistors by control of surface morphology of spacer layer
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://stacks.iop.org/1347-4065/57/i=1S/a=01AD01/pdf
Reference33 articles.
1. Surface-charge controlled AlGaN/GaN-power HFET without current collapse and gm dispersion
2. The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs
3. Barrier Thickness Dependence of Electrical Properties and DC Device Characteristics of AlGaN/GaN Heterostructure Field-Effect Transistors Grown by Plasma-Assisted Molecular-Beam Epitaxy
4. AlGaN/GaN HEMTs on SiC with f/sub T/ of over 120 GHz
5. AlGaN/GaN high electron mobility transistors with InGaN back-barriers
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1. Thermal budget increased alloy disorder scattering of 2DEG in III–N heterostructures;Applied Physics Letters;2022-05-23
2. Surface‐Oxide‐Controlled InAlGaN/GaN High‐Electron‐Mobility Transistors Using Al 2 O 3 ‐Based Insulated‐Gate Structures with H 2 O Vapor Pretreatment;physica status solidi (a);2022-02-03
3. The effect of barrier layers on 2D electron effective mass in Al0.3Ga0.7N/AlN/GaN heterostructures;Journal of Physics: Condensed Matter;2021-05-19
4. The effect of passivation layer, doping and spacer layer on electron- longitudinal optical phonon momentum relaxation time in Al0.3Ga0.7N/AlN/GaN heterostructures;Materials Science in Semiconductor Processing;2021-02
5. Enhancement of electron transport properties of InAlGaN/AlN/GaN HEMTs on silicon substrate with GaN insertion layer;Applied Physics Express;2020-04-29
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