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Introduction and annealing of primary defects in proton-bombarded n-GaN

  • Published:2013-09-12 Issue:1 Volume:251 Page:211-218
  • ISSN:0370-1972
  • Container-title:physica status solidi (b)
  • language:en
  • Short-container-title:Phys. Status Solidi B

Author:

Schmidt Matthias1,de Meyer Hannes1,Johan Janse van Rensburg Pieter1,Ernst Meyer Walter1,Danie Auret Francois1

Affiliation:

1. Department of Physics; University of Pretoria; Private bag X20 0028 Hatfield South Africa

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Defect mediated modification of structural, optical and magnetic properties of Xe3+ ions irradiated GaN/sapphire films;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2020-03

2. Characterizing single isolated radiation-damage events from molecular dynamics via virtual diffraction methods;Journal of Applied Physics;2018-04-28

3. Deep level transient spectroscopy characterisation of Xe irradiated GaN;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2017-10

4. Modelling Effects of Radiation Damage;Ion Beam Modification of Solids;2016

5. Observation of low-temperature annealing of a primary defect in gallium nitride;Physica B: Condensed Matter;2014-04
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