Observation of low-temperature annealing of a primary defect in gallium nitride-Reference-Cited by-同舟云学术

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Observation of low-temperature annealing of a primary defect in gallium nitride

Published:2014-04 Issue: Volume:439 Page:64-66
ISSN:0921-4526
Container-title:Physica B: Condensed Matter
language:en
Short-container-title:Physica B: Condensed Matter

Author:

Schmidt Matthias,Janse van Rensburg P. Johan,de Meyer Hannes,Meyer Walter E.,Auret F. Danie

Funder

Postdoctoral Fellowship Program of the University of Pretoria

National Research Foundation (NRF)

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference14 articles.

1. Thermal and optical emission and capture rates and cross sections of electrons and holes at imperfection centers in semiconductors from photo and dark junction current and capacitance experiments

2. Radiation effects in GaN materials and devices

3. Radiation hardness of gallium nitride

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Uniformity investigation of MOCVD-grown LED layers;Crystal Research and Technology;2015-08-03

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