Crack Statististics and Stress Analysis of Thick GaN on Patterned Silicon Substrate
Author:
Affiliation:
1. Université Côte d'Azur, CNRS, CRHEA; Rue Bernard Grégory 06560 Valbonne France
2. CEMES-CNRS UPR-8011; 29 rue Jeanne Marvig 31055 Toulouse Cedex 4 France
3. Université de Toulouse, UPS; 118 Route de Narbonne 31062 Toulouse France
Funder
EMMA fellowship
Publisher
Wiley
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference25 articles.
1. A review of GaN-based optoelectronic devices on silicon substrate
2. GaN-Based Devices on Si
3. Molecular Beam Epitaxy of Group-III Nitrides on Silicon Substrates: Growth, Properties and Device Applications
4. AlN buffer layer growth for GaN epitaxy on (111) Si: Al or N first?
5. Growth of thick GaN layers on 4-in. and 6-in. silicon (111) by metal-organic vapor phase epitaxy
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2. Suspended-ultrathin Si membrane on SOI: a novel structure to reduce thermal stress of GaN epilayer;IOP Conference Series: Materials Science and Engineering;2020-03-01
3. Long range, non-destructive characterization of GaN substrates for power devices;Journal of Crystal Growth;2019-01
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