Author:
Gallagher J.C.,Anderson T.J.,Luna L.E.,Koehler A.D.,Hite J.K.,Mahadik N.A.,Hobart K.D.,Kub F.J.
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference26 articles.
1. Editors’ choice—on the radiation tolerance of AlGaN/GaN HEMTs;Weaver;ECS J. Solid State Sci. Technol.,2016
2. Effect of 5 MeV proton radiation on DC performance and reliability of circular-shaped AlGaN/GaN high electron mobility transistors;Xi;J. Vac. Sci. Technol. B, Nanotechnol. Microelectron. Mater. Process. Meas. Phenom.,2014
3. Effect of reduced extended defect density in MOCVD grown AlGaN/GaN HEMTs on native GaN substrates;Anderson;IEEE Electron Dev. Lett.,2016
4. Temperature-dependent hall measurement of AlGaN/GaN heterostructures on Si substrates;Lee;J. Korean Phys. Soc.,2015
5. Vertical power p-n diodes based on bulk GaN;Kizilyalli;IEEE Trans. Electron Dev.,2015
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