Polarity- and Site-Controlled Metal Organic Vapor Phase Epitaxy of 3D-GaN on Si(111)-Reference-Cited by-同舟云学术

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Polarity- and Site-Controlled Metal Organic Vapor Phase Epitaxy of 3D-GaN on Si(111)

Published:2018-01-15 Issue:5 Volume:255 Page:1700485
ISSN:0370-1972
Container-title:physica status solidi (b)
language:en
Short-container-title:Phys. Status Solidi B

Author:

Blumberg Christian¹^ORCID,Grosse Simon¹,Weimann Nils¹^ORCID,Tegude Franz-Josef¹,Prost Werner¹^ORCID

Affiliation:

1. Solid-State Electronics Department University of Duisburg-Essen; Lotharstraße 55 47057 Duisburg Germany

Funder

German Research Foundation (DFG)

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference60 articles.

1. Polarity in GaN and ZnO: Theory, measurement, growth, and devices

2. DRAM concept based on the hole gas transient effect in a AlGaN/GaN HEMT

3. AlGaN/GaN HFETs fabricated on 100-mm GaN on silicon () substrates

4. P. Liu K. Kakushima H. Iwai A. Nakajima T. Makino M. Ogura S. Nishizawa H. Ohashi 2013

5. A Review of GaN on SiC High Electron-Mobility Power Transistors and MMICs

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3. High quality GaN tetrapodal structures hetero-integrated on 3D Si surfaces;Applied Surface Science;2021-11

4. Polarity-controlled AlN/Si templates by in situ oxide desorption for variably arrayed MOVPE-GaN nanowires;Journal of Crystal Growth;2021-07

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