Spatially controlled VLS epitaxy of gallium arsenide nanowires on gallium nitride layers-Reference-Cited by-同舟云学术

Spatially controlled VLS epitaxy of gallium arsenide nanowires on gallium nitride layers

Published:2020 Issue:7 Volume:22 Page:1239-1250
ISSN:1466-8033
Container-title:CrystEngComm
language:en
Short-container-title:CrystEngComm

Author:

Blumberg C.¹²³⁴⁵^ORCID,Liborius L.¹²³⁴⁵^ORCID,Ackermann J.¹²³⁴⁵,Tegude F.-J.¹²³⁴⁵^ORCID,Poloczek A.¹²³⁴⁵,Prost W.¹²³⁴⁵^ORCID,Weimann N.¹²³⁴⁵^ORCID

Affiliation:

1. University of Duisburg-Essen

2. Dept. Components for High Frequency Electronics

3. Faculty of Engineering, and CENIDE

4. Duisburg

5. Germany

Abstract

MOVPE of Au catalyzed p-GaAs nanowires on n-GaN layers. Left: VLS growth optimization (density and morphology). Middle and right: site-controlled pn-junctions by lateral and vertical anisotropic NWs in structured SiOx openings (scalebar 1 μm).

Funder

Deutsche Forschungsgemeinschaft

Publisher

Royal Society of Chemistry (RSC)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2020/CE/C9CE01926J

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