Process Development for Wet‐Chemical Surface Functionalization of Gallium Arsenide Based Nanowires-Reference-Cited by-同舟云学术

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Process Development for Wet‐Chemical Surface Functionalization of Gallium Arsenide Based Nanowires

Published:2019-03-14 Issue:4 Volume:256 Page:1800678
ISSN:0370-1972
Container-title:physica status solidi (b)
language:en
Short-container-title:Phys. Status Solidi B

Author:

Speich Claudia¹,Dissinger Frank¹,Liborius Lisa¹^ORCID,Hagemann Ulrich²^ORCID,Waldvogel Siegfried R.³,Tegude Franz‐Josef¹,Prost Werner¹^ORCID

Affiliation:

1. University of Duisburg‐EssenCenter for Semiconductor Technology and OptoelectronicsLotharstr. 5547057DuisburgGermany

2. University of Duisburg‐EssenInterdisciplinary Center for Analytics on the NanoscaleCarl‐Benz‐Str. 19947057DuisburgGermany

3. Johannes Gutenberg University MainzInstitute of Organic ChemistryDuesbergweg 10–1455128MainzGermany

Funder

DFG

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssb.201800678

Reference49 articles.

1. Narrow gap nanowires: From nanotechnology to RF-circuits on Si

2. A III–V nanowire channel on silicon for high-performance vertical transistors

3. High-Speed GaN/GaInN Nanowire Array Light-Emitting Diode on Silicon(111)

4. A GaAs Nanowire Array Solar Cell With 15.3% Efficiency at 1 Sun

5. Passivation of semiconductors

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Optimization of the Dip Coating Parameters for Depositing Cesium Lead Halide Perovskite Quantum Dot Films on Gallium Arsenide Substrates;2023 International Electrical Engineering Congress (iEECON);2023-03-08

2. Modification of the Atomic and Electronic Structure of III–V Semiconductor Surfaces at Interfaces with Electrolyte Solutions (Review);Semiconductors;2020-06-30

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