Optimization of the Dip Coating Parameters for Depositing Cesium Lead Halide Perovskite Quantum Dot Films on Gallium Arsenide Substrates-Reference-Cited by-同舟云学术

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Optimization of the Dip Coating Parameters for Depositing Cesium Lead Halide Perovskite Quantum Dot Films on Gallium Arsenide Substrates

Published:2023-03-08 Issue: Volume: Page:
ISSN:
Container-title:2023 International Electrical Engineering Congress (iEECON)
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Author:

Amboy Jefril M.¹,Jeco Bernice Mae F. Yu²,De Ocampo Anton Louise P.³,Okada Yoshitaka²

Affiliation:

1. Batangas State University,Department of Electronics Engineering,Batangas City,PH

2. Research Center for Advanced Science and Technology, The University of Tokyo,Tokyo,Japan

3. Electronic Systems Research Center, Batangas State University,Batangas City,PH

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10126135/10126143/10126959.pdf?arnumber=10126959

Reference14 articles.

1. Size-controlled emission of long-time durable CsPbBr3 perovskite quantum dots embedded tellurite glass nanocomposites

2. Improving the Stability of Metal Halide Perovskite Quantum Dots by Encapsulation

3. Process Development for Wet‐Chemical Surface Functionalization of Gallium Arsenide Based Nanowires

4. Cesium lead halide perovskite quantum dot deposition on GaAs substrates by dip coating

5. Optical and mechanical investigation of InAs/GaAs quantum dots solar cells and InAs nanowires for the application of photovoltaic device;dai;Rochester Institute of Technology,2013

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