Amorphous thin films in the gallium-chalcogen system-Reference-Cited by-同舟云学术

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Amorphous thin films in the gallium-chalcogen system

Published:2016-05-06 Issue:6 Volume:253 Page:1033-1037
ISSN:0370-1972
Container-title:physica status solidi (b)
language:en
Short-container-title:Phys. Status Solidi B

Author:

Popescu M.¹,Sava F.¹,Lőrinczi A.¹,Velea A.¹,Simandan I. D.¹,Galca A. C.¹,Matei E.¹,Socol G.²,Gherendi F.²,Savastru D.³,Miclos S.³

Affiliation:

1. National Institute of Materials Physics; Atomistilor 405A, P.O. Box M.G. 7, Magurele 077125 Ilfov Romania

2. National Institute for Laser, Plasma and Radiation Physics; Atomistilor 409, P.O. Box M.G. 36, Magurele 077125 Ilfov Romania

3. Institute for Research and Development in Optoelectronics - INOE2000; Atomistilor 409, Magurele 077125 Ilfov Romania

Funder

Ministry of National Education (Romania)

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference31 articles.

1. X-Ray, Raman and Photoluminescence Study of Vacancy Ordered ?-Ga2Se3 under High Pressure

2. Rare-earth chalcogenides ? an emerging class of optical materials

3. Thin films of amorphous Ga2S3 and rare-earth sulphides

4. Verres formes par les sulfures L2S3 des terres rares avec le sulfure de gallium Ga2S3

5. Electrical and optical properties of In2Se3 thin films

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1. Structure and Luminescent Properties of Glasses in the GeS2-Ga2S3-Sb2S3:Pr3+ System;Materials;2023-06-28

2. Unraveling the Atomic Structure of Bulk Binary Ga–Te Glasses with Surprising Nanotectonic Features for Phase-Change Memory Applications;ACS Applied Materials & Interfaces;2021-07-28

3. Atypical phase-change alloy Ga2Te3: atomic structure, incipient nanotectonic nuclei, and multilevel writing;Journal of Materials Chemistry C;2021

4. Glassy GaS: transparent and unusually rigid thin films for visible to mid-IR memory applications;Physical Chemistry Chemical Physics;2020

5. Synthesis, Structure and Application of Intramolecularly-Coordinated Gallium Chalcogenides: Suitable Single-Source precursors for Ga x Se y Materials;Chemistry - A European Journal;2018-09-04

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