Glassy GaS: transparent and unusually rigid thin films for visible to mid-IR memory applications-Reference-Cited by-同舟云学术

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Glassy GaS: transparent and unusually rigid thin films for visible to mid-IR memory applications

Published:2020 Issue:44 Volume:22 Page:25560-25573
ISSN:1463-9076
Container-title:Physical Chemistry Chemical Physics
language:en
Short-container-title:Phys. Chem. Chem. Phys.

Author:

Tverjanovich Andrey¹²³⁴,Khomenko Maxim⁵⁶⁴,Bereznev Sergei⁷⁸⁹¹⁰,Fontanari Daniele¹¹¹²¹³¹⁴,Sokolov Anton⁵⁶⁴¹¹¹²,Usuki Takeshi¹⁵¹⁶¹⁷¹⁸,Ohara Koji¹⁹²⁰²¹¹⁸,Le Coq David²²²³²⁴¹⁴,Masselin Pascal¹¹¹²¹³¹⁴,Bychkov Eugene⁵⁶⁴¹¹¹²^ORCID

Affiliation:

1. Institute of Chemistry

2. St. Petersburg State University

3. 198504 St. Petersburg

4. Russia

5. ILIT RAS – Branch of the FSRC ‘Crystallography and Photonics’ RAS

6. 140700 Shatura

7. Department of Materials and Environmental Technology

8. Tallinn University of Technology

9. 19086 Tallinn

10. Estonia

11. Laboratoire de Physico-Chimie de l’Atmosphère

12. Université du Littoral Côte d’Opale

13. 59140 Dunkerque

14. France

15. Faculty of Science

16. Yamagata University

17. Yamagata 990-8560

18. Japan

19. Diffraction and Scattering Division

20. Japan Synchrotron Radiation Research Institute

21. Sayo-gun

22. Institut des Sciences Chimiques de Rennes

23. Université Rennes

24. 35000 Rennes

Abstract

An unusually rigid glassy GaS film obtained by PLD shows an excellent light-induced damage threshold promising for memory applications.

Funder

Russian Academy of Sciences

European Regional Development Fund

Ministry of Science and Higher Education of the Russian Federation

Publisher

Royal Society of Chemistry (RSC)

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

http://pubs.rsc.org/en/content/articlepdf/2020/CP/D0CP04697C

Reference94 articles.

1. Reversible Electrical Switching Phenomena in Disordered Structures

2. Rapid‐phase transitions of GeTe‐Sb2Te3pseudobinary amorphous thin films for an optical disk memory

3. Phase-change materials for rewriteable data storage

4. Integrated all-photonic non-volatile multi-level memory

5. Designing crystallization in phase-change materials for universal memory and neuro-inspired computing

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3. Structure and Luminescent Properties of Glasses in the GeS2-Ga2S3-Sb2S3:Pr3+ System;Materials;2023-06-28

4. Ellipsometry study of optical properties and dielectric response of SnS2 and GaS crystals;Journal of Materials Science: Materials in Electronics;2023-03

5. GeTe₂ Phase Change Material for Terahertz Devices with Reconfigurable Functionalities Using Optical Activation;ACS Applied Materials & Interfaces;2023-02-13

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