Comparative study of GaAs and GaInNAs/GaAs multi-quantum well solar cells
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference18 articles.
1. The Physics of Solar Cells
2. Solar cell efficiency tables (version 37)
3. 1-eV solar cells with GaInNAs active layer
4. InGaP/GaAs/InGaAs 41% concentrator cells using bi-facial epigrowth
5. A new approach to high‐efficiency multi‐band‐gap solar cells
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1. Investigation of V-groove fabricated GaInNAs nipi solar cell structure;Optical and Quantum Electronics;2021-01
2. Characterization of III-V dilute nitride based multi-quantum well p-i-n diodes for next generation opto-electrical conversion devices;Materials Today: Proceedings;2019
3. Very high dose electron irradiation effects on photoluminescence from GaInNAs/GaAs quantum wells grown by molecular beam epitaxy;Optical Materials;2017-02
4. Instability of structural defects generated by electron irradiation in GaInNAs quantum wells;Journal of Luminescence;2014-10
5. Experimental investigation and numerical modelling of photocurrent oscillations in lattice matched Ga1−xIn x N y As1−y/GaAs quantum well p-i-n photodiodes;Nanoscale Research Letters;2014-02-18
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