Instability of structural defects generated by electron irradiation in GaInNAs quantum wells
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,Biochemistry,General Chemistry,Atomic and Molecular Physics, and Optics,Biophysics
Reference15 articles.
1. Low-threshold-current 1.32-μm GaInNAs/GaAs single-quantum-well lasers grown by molecular-beam epitaxy
2. Comparative study of GaAs and GaInNAs/GaAs multi-quantum well solar cells
3. Origin of improved luminescence efficiency after annealing of Ga(In)NAs materials grown by molecular-beam epitaxy
4. Formation of nonradiative defects in molecular beam epitaxial GaNxAs1−x studied by optically detected magnetic resonance
5. Enhancement in photoluminescence from 1 eV GaInNAs epilayers subject to 7 MeV electron irradiation
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Effects of 1-MeV Electron Irradiation on the Photoluminescence of GaInNAs|GaAs Single Quantum Well Structure;Semiconductors;2020-05
2. Very high dose electron irradiation effects on photoluminescence from GaInNAs/GaAs quantum wells grown by molecular beam epitaxy;Optical Materials;2017-02
3. Infrared transitions between hydrogenic states in GaInNAs/GaAs quantum wells;International Journal of Modern Physics B;2016-09-06
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