Author:
Royall Ben,Khalil Hagir,Mazzucato Simone,Erol Ayse,Balkan Naci
Abstract
Abstract
Photocurrent oscillations, observed at low temperatures in lattice-matched Ga1−x
In
x
N
y
As1−y
/GaAs multiple quantum well (MQW) p-i-n samples, are investigated as a function of applied bias and excitation wavelength and are modelled with the aid of semiconductor simulation software. The oscillations appear only at low temperatures and have the highest amplitude when the optical excitation energy is in resonance with the GaInNAs bandgap. They are explained in terms of electron accumulation and the formation of high-field domains in the GaInNAs QWs as a result of the disparity between the photoexcited electron and hole escape rates from the QWs. The application of the external bias results in the motion of the high-field domain towards the anode where the excess charge dissipates from the well adjacent to anode via tunnelling.
Publisher
Springer Science and Business Media LLC
Subject
Condensed Matter Physics,General Materials Science
Reference37 articles.
1. Kondow M, Uomi K, Niwa A, Kitatani T, Watahiki S, Yazawa Y: GaInNAs: a novel material for long-wavelength-range laser diodes with excellent high-temperature performance. Jpn J Appl Phys 1996, 35: 1273–1275. 10.1143/JJAP.35.1273
2. Kondow M, Ishikawa F: High-quality growth of GaInNAs for application to near-infrared laser diodes. Advances in optical technologies. Adv Opt Technol 2012, 2012: 754546. 1–11 1–11
3. Erol A: Dilute III-V nitride semiconductors and material systems. In Materials Science. Berlin: Springer; 2008:105.
4. Henini M: Dilute Nitride Semiconductors. Amsterdam: Elsevier; 2005.
5. Zhao H, Haglund A, Westburgh P, Wang SM, Gustavsson JS, Sadeghi M, Larsson A: 1310 nm GaInNAs triple quantum well laser with 13 GHz modulation bandwidth. Electron Lett 2009, 45: 356–357. 10.1049/el.2009.3657
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