Narrow Excitonic Lines in Core–Shell Nanorods With InGaN/GaN Quantum Wells Intersected by Basal Stacking Faults-Reference-Cited by-同舟云学术

Narrow Excitonic Lines in Core–Shell Nanorods With InGaN/GaN Quantum Wells Intersected by Basal Stacking Faults

Published:2019-03-18 Issue:6 Volume:256 Page:1800648
ISSN:0370-1972
Container-title:physica status solidi (b)
language:en
Short-container-title:Phys. Status Solidi B

Author:

Evropeitsev Evgeniy A.¹,Robin Yoann²³,Shubina Tatiana V.¹,Bae Si‐Young²⁴,Nitta Shugo²,Kirilenko Demid A.¹,Davydov Valery Y.¹,Smirnov Alexandr N.¹,Toropov Alexey A.¹,Kushimoto Maki⁵,Ivanov Sergey V.¹,Amano Hiroshi²

Affiliation:

1. Ioffe Institute194021 St. PetersburgRussia

2. Institute of Materials and Systems for Sustainability (IMaSS)Nagoya UniversityNagoyaJapan

3. Center for Integrated Research of Future Electronics (CIRFE)Nagoya UniversityNagoyaJapan

4. Korea Institute of Ceramic Engineering and TechnologyJinjuSouth Korea

5. Department of Electrical Engineering and Computer ScienceNagoya UniversityNagoyaJapan

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssb.201800648

Reference22 articles.

1. Luminescence associated with stacking faults in GaN

2. Stacking Faults as Quantum Wells for Excitons in Wurtzite GaN

3. Exciton localization on basal stacking faults in a-plane epitaxial lateral overgrown GaN grown by hydride vapor phase epitaxy

4. Stacking fault related luminescence in GaN nanorods

5. Polarization of stacking fault related luminescence in GaN nanorods

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