Exciton localization on basal stacking faults in a-plane epitaxial lateral overgrown GaN grown by hydride vapor phase epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3075596
Reference30 articles.
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4. Defect reduction in (112¯0) a-plane GaN by two-stage epitaxial lateral overgrowth
5. Improved quality (112¯0)a-plane GaN with sidewall lateral epitaxial overgrowth
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