42-4L: Late-News Paper : Chemical Stability Improvement in IGZO Using Selective Laser Annealing System-Reference-Cited by-同舟云学术

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42-4L: Late-News Paper : Chemical Stability Improvement in IGZO Using Selective Laser Annealing System

Published:2017-05 Issue:1 Volume:48 Page:604-607
ISSN:0097-966X
Container-title:SID Symposium Digest of Technical Papers
language:en
Short-container-title:

Author:

Goto Tetsuya¹,Saito Kaori²,Imaizumi Fuminobu¹,Mizumura Michinobu²,Suwa Akira³,Ikenoue Hiroshi³,Sugawa Shigetoshi¹

Affiliation:

1. Tohoku University; Sendai Japan

2. V-Technology Co., Ltd.; Yokohama Japan

3. Kyushu University; Fukuoka Japan

Publisher

Wiley

Reference10 articles.

1. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

2. Sci;Kamiya;Technol. Adv. Mater,2010

3. Optical detection of DNA translocation through silicon nanopore by ultraviolet light

4. 27.4: Selective Laser-Annealing System for LTPS-TFT Panels

5. 67-1: Novel LTPS Technology for Large Substrate

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