High‐Temperature Annealing of AlGaN-Reference-Cited by-同舟云学术

High‐Temperature Annealing of AlGaN

Published:2020-10-07 Issue:23 Volume:217 Page:2000473
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Hagedorn Sylvia¹^ORCID,Khan Taimoor¹,Netzel Carsten¹,Hartmann Carsten²,Walde Sebastian¹,Weyers Markus¹

Affiliation:

1. Ferdinand-Braun-Institut Leibniz-Institut für Höchstfrequenztechnik Gustav-Kirchhoff-Str. 4 Berlin 12489 Germany

2. Application Science Department Leibniz-Institut für Kristallzüchtung Max-Born-Str. 2 Berlin 12489 Germany

Funder

Bundesministerium für Bildung und Forschung

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssa.202000473

Reference26 articles.

1. Phototherapy and Photochemotherapy of Skin Diseases

2. III-Nitride Ultraviolet Emitters

3. Application of GaN-based ultraviolet-C light emitting diodes – UV LEDs – for water disinfection

4. Development of 230-270 nm AlGaN-based deep-UV LEDs

5. Advances in group III-nitride-based deep UV light-emitting diode technology

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