Impact of Reduced Gate‐to‐Source Spacing on Indium Phosphide High Electron Mobility Transistor Performance-Reference-Cited by-同舟云学术

Impact of Reduced Gate‐to‐Source Spacing on Indium Phosphide High Electron Mobility Transistor Performance

Published:2020-09-28 Issue:3 Volume:218 Page:2000191
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Calvo Ruiz Diego¹^ORCID,Han Daxin¹,Bonomo Giorgio¹,Saranovac Tamara¹,Ostinelli Olivier¹,Bolognesi Colombo R.¹

Affiliation:

1. Department of Information Technology and Electrical Engineering Millimeter Wave Electronics Group ETH Zürich Gloriastrasse 35, ETZ Building 8092 Zürich Switzerland

Funder

Schweizerischer Nationalfonds zur Förderung der Wissenschaftlichen Forschung

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssa.202000191

Reference24 articles.

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2. Lg = 25 nm InGaAs/InAlAs high-electron mobility transistors with both fT and fmax in excess of 700 GHz

3. First Demonstration of Amplification at 1 THz Using 25-nm InP High Electron Mobility Transistor Process

4. K.Shinohara T.Matsui T.Mimura S.Hiyamizu inProc. of IEEE MTT-S Int. Microwave Symp. (IMS) Phoenix AZ USA2001.

5. F.Robin H.Meier O. J.Homan W.Bachtold inProc. of 14th Indium Phosphide and Related Materials Conf. (IPRM) Stockholm Sweden2002.

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