67-3: Bottom-Gate ELA Poly-Si TFT for High-Resolution AMOLED Mobile Displays-Reference-Cited by-同舟云学术

67-3: Bottom-Gate ELA Poly-Si TFT for High-Resolution AMOLED Mobile Displays

Published:2016-05 Issue:1 Volume:47 Page:923-926
ISSN:0097-966X
Container-title:SID Symposium Digest of Technical Papers
language:en
Short-container-title:

Author:

Oh Kummi¹²,Yang Shun-Young¹,Lee Jung-Il¹,Park Kwon-Shik¹,Kang In-Byeong¹,Sung Man Young²

Affiliation:

1. R&D Center, LG Display Co., Ltd.; 10845 Paju-city Gyeonggi-do Korea

2. The Department of Electrical Engineering; Korea University; 02841 Seoul Korea

Publisher

Wiley

Reference11 articles.

1. Past, Current and Future TFT Technologies for Display Manufacturing;Jang;Int. Workshop AMLCD’

2. Poly-Si TFTs with Bottom Gate structure using Excimer Laser Crystallization for AMOLED Displays;Oh;Electronics Letters,2015

3. Inverse staggered poly-Si thin-film transistor with non-laser crystallization of amorphous silicon;Oh;Solid-State Electronics,2008

4. Novel OffsetGated Bottom Gate Poly-Si TFTs with a Combination Structure of Ultrathin Channel and Raised Source/Drain;Kang;IEEE Electron Device Lett.,2008

5. A Kink-Effect-Free Poly-Si Thin-Film Transistor with Current and Electric Field Split Structure Design;Chien;IEEE Trans. Electron Devices,2010

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