Inverse staggered poly-Si thin-film transistor with non-laser crystallization of amorphous silicon-Reference-Cited by-同舟云学术

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Inverse staggered poly-Si thin-film transistor with non-laser crystallization of amorphous silicon

Published:2008-03 Issue:3 Volume:52 Page:482-486
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Oh J.H.,Ahn K.W.,Kang D.H.,Park W.H.,Jang J.,Chang Y.J.,Choi J.B.,Min H.K.,Kim C.W.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference14 articles.

1. Metal-induced crystallization of amorphous silicon;Yoon;Thin Solid Films,2001

2. Inverse staggered poly-Si and amorphous Si double structure TFT’s for LCD panels with peripheral driver circuits integration;Aoyama;IEEE Trans Electron Dev,1996

3. High performance bottom gate TFTs by excimer laser crystallization and post hydrogenation;Gosain;Jpn J Appl Phys,1995

4. Alternative approach to large-size AMOLED HD TV;Chung;In: SID international symposium, digest of technical papers, society for information displays,2005

5. 4inch VGA reflection-type poly-Si TFT LCD with integrated digital driver using seven-mask CG Silicon CMOS process;Hirakata;In: SID international symposium, digest of technical papers, society for information displays,2000

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1. 67-3: Bottom-Gate ELA Poly-Si TFT for High-Resolution AMOLED Mobile Displays;SID Symposium Digest of Technical Papers;2016-05

2. Poly‐Si TFTs with bottom‐gate structure using excimer laser crystallisation for AMOLED displays;Electronics Letters;2015-11

3. Active-matrix organic light-emitting diode using inverse-staggered poly-Si TFTs with a center-offset gated structure;Journal of the Society for Information Display;2010

4. Reduction of Leakage Currents in Bottom-Gate N-Channel Metal-Induced Crystallization through a Cap Layer Polycrystalline Silicon Thin-Film Transistors by Applying Off-Bias Stress;Japanese Journal of Applied Physics;2009-08-20

5. Micro-Raman spectroscopy characterization of polycrystalline silicon films fabricated by excimer laser crystallization;Optics and Lasers in Engineering;2009-05

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