Realization of a General Method for Extracting Specific Contact Resistance of Silicon‐Based Dopant‐Free Heterojunctions-Reference-Cited by-同舟云学术

Realization of a General Method for Extracting Specific Contact Resistance of Silicon‐Based Dopant‐Free Heterojunctions

Published:2021-12-07 Issue:2 Volume:6 Page:2100394
ISSN:2367-198X
Container-title:Solar RRL
language:en
Short-container-title:Solar RRL

Author:

Chen Liyan¹,Lin Hao²,Liu Zhaolang²,Wu Taojian¹,Pang Yicong²,Gao Pingqi²^ORCID,Shen Wenzhong¹

Affiliation:

1. Institute of Solar Energy and Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education) School of Physics and Astronomy Shanghai Jiao Tong University Shanghai 200240 China

2. School of Materials Sun Yat-sen University Guangzhou 510275 China

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Energy Engineering and Power Technology,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/solr.202100394

Reference38 articles.

1. Silicon heterojunction solar cell with passivated hole selective MoOx contact

2. Molybdenum oxide MoOx: A versatile hole contact for silicon solar cells

3. Proof-of-Concept p-Type Silicon Solar Cells With Molybdenum Oxide Local Rear Contacts

4. 23.5%-efficient silicon heterojunction silicon solar cell using molybdenum oxide as hole-selective contact

5. Superior performance of V 2 O 5 as hole selective contact over other transition metal oxides in silicon heterojunction solar cells

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