Efficient and Stable Monolithic Perovskite/Silicon Tandem Solar Cells Enabled by Contact‐Resistance‐Tunable Indium Tin Oxide Interlayer

Author:

Jin Yongbin1,Feng Huiping1,Fang Zheng1,Zhang Hong2,Yang Liu1,Chen Xuelin1,Li Yingji1,Deng Bingru1,Zhong Yawen1,Zeng Qinghua2,Huang Jiarong2,Weng Yalian1,Yang Jinxin1,Tian Chengbo1,Xie Liqiang1ORCID,Zhang Jinyan2,Wei Zhanhua1ORCID

Affiliation:

1. Xiamen Key Laboratory of Optoelectronic Materials and Advanced Manufacturing Institute of Luminescent Materials and Information Displays College of Materials Science and Engineering Huaqiao University Xiamen 361021 China

2. National Engineering Research Center of High Efficiency Solar Cell Equipment and Technology Gold Stone (Fujian) Energy Company Limited Quanzhou 362005 China

Abstract

AbstractThe imperfect charge behavior at the interfaces of perovskite/electron‐transport layer (ETL)/transparent conducting oxide (TCO) limits the further performance improvement of perovskite/silicon tandem solar cells. Herein, an indium tin oxide interlayer is deposited between ETL and TCO to address this issue. Specifically, the interlayer is prepared using an all‐physical and H2O‐free method, electron‐beam evaporation, which can avoid any potential damage to the underlying perovskite and ETL layers. Moreover, the interlayer's composition can be readily tuned by changing the evaporator component, enabling authors to regulate the contact resistance and energy‐level alignment of the ETL/TCO interface. Consequently, the resultant perovskite/silicon tandem solar cells exhibit an impressive power conversion efficiency (PCE) of 30.8% (certified 30.3%). Moreover, the device retains 98% of its initial PCE after continuous operation under ambient conditions for 1078 h, representing one of the most stable and efficient perovskite/silicon tandem solar cells.

Funder

National Natural Science Foundation of China

Natural Science Foundation of Fujian Province

Publisher

Wiley

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