Influence of Dopant Elements on Degradation Phenomena in B‐ and Ga‐Doped Czochralski‐Grown Silicon-Reference-Cited by-同舟云学术

Influence of Dopant Elements on Degradation Phenomena in B‐ and Ga‐Doped Czochralski‐Grown Silicon

Published:2021-04-10 Issue: Volume: Page:2100147
ISSN:2367-198X
Container-title:Solar RRL
language:en
Short-container-title:Sol. RRL

Author:

Kwapil Wolfram¹²^ORCID,Dalke Jonas²,Post Regina¹²,Niewelt Tim¹²

Affiliation:

1. Laboratory for Photovoltaic Energy Conversion Department of Sustainable Systems Engineering (INATECH) University of Freiburg Emmy-Noether-Str. 2 79110 Freiburg Germany

2. Division Photovoltaics Department Quality Assurance, Characterization, and Simulation Fraunhofer Institute for Solar Energy Systems (ISE) Heidenhofstraße 2 79110 Freiburg Germany

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Energy Engineering and Power Technology,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/solr.202100147

Reference56 articles.

1. S. W.Glunz S.Rein W.Warta J.Knobloch W.Wettling inProc. 2nd World Conference on Photovoltaic Solar Energy Conversion(Eds: J. Schmid E.D. Dunlop H.A. Ossenbrink P. Helm H. Ehmann) European Commission Ispra Italy1998 pp.1343–1346.

2. Light-Induced Degradation in Crystalline Silicon Solar Cells

3. A.Herguth G.Schubert M.Kaes G.Hahn inProc. 21st European Photovoltaic Solar Energy Conf. and Exhibition(Ed: J. Poortmans) WIP Renewable Energies Munich Germany2006 pp.530–537.

4. Comparison of boron- and gallium-doped p-type Czochralski silicon for photovoltaic application

5. Evidence of an identical firing-activated carrier-induced defect in monocrystalline and multicrystalline silicon

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