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CdTe and anodic oxides on Hg1−xCdxTe: interface and compositional analysis using Rutherford backscattering spectroscopy

  • Published:2005 Issue:6 Volume:37 Page:562-567
  • ISSN:0142-2421
  • Container-title:Surface and Interface Analysis
  • language:en
  • Short-container-title:Surf. Interface Anal.

Author:

Anjali ,Srivastava P.,Mohapatra S.,Pal R.,Vyas H. P.,Sekhar B. R.,Sehgal H. K.

Publisher

Wiley

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,General Chemistry

Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Band gap controlled H loss from passivated Hg1−xCdxTe (MCT) wafers under intense electronic excitations;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2011-05

2. Study of H loss from hydrogenated Hg1−xCdxTe under high electronic excitation by elastic recoil detection analysis (ERDA);Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2009-05

3. Improvement in the ability to block Hg out diffusion from Hg1−xCdxTe by hydrogenation;Semiconductor Science and Technology;2006-06-20

4. RBS study of annealing effects in passivated mercury cadmium telluride;Semiconductor Science and Technology;2005-09-14
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