Quantitative measurements of the stoichiometry of anodic oxides grown on Hg0.78Cd0.22Te
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.96113
Reference18 articles.
1. Anodic Oxide Films on Hg1 − x Cd x Te
2. Oxide and interface properties of anodic films on Hg1−xCdxTe
3. Anodic oxide composition and Hg depletion at the oxide–semiconductor interface of Hg1−xCdxTe
4. Properties Of Passivant Films On HgCdTe - Interaction With The Substrate
5. The composition of anodic oxide films on Hg0.8Cd0.2Te
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1. RBS study of annealing effects in passivated mercury cadmium telluride;Semiconductor Science and Technology;2005-09-14
2. CdTe and anodic oxides on Hg1−xCdxTe: interface and compositional analysis using Rutherford backscattering spectroscopy;Surface and Interface Analysis;2005
3. In-situ evaluation of the anodic oxide growth on Hg1−xCdxTe (MCT) using ellipsometry and second harmonic generation;Journal of Electronic Materials;2000-06
4. Correlation of x‐ray photoelectron spectroscopy and Rutherford backscattering spectroscopy depth profiles on Hg1−xCdxTe native oxides;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1994-01
5. Chemical effects of annealing ZnS-capped anodic films on Hg1−xCdxTe(x≈0.2);Applied Surface Science;1992-01
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