Ion‐Accumulation‐Induced Charge Tunneling for High Gain Factor in P–I–N‐Structured Perovskite CH 3 NH 3 PbI 3 X‐Ray Detector-Reference-Cited by-同舟云学术

Ion‐Accumulation‐Induced Charge Tunneling for High Gain Factor in P–I–N‐Structured Perovskite CH 3 NH 3 PbI 3 X‐Ray Detector

Published:2021-12-03 Issue: Volume: Page:2100908
ISSN:2365-709X
Container-title:Advanced Materials Technologies
language:en
Short-container-title:Adv. Mater. Technol.

Author:

Jia Shanshan¹,Xiao Yingrui¹,Hu Mingxin¹,He Xilai¹,Bu Nuo¹,Li Nan¹,Liu Yucheng¹,Zhang Yunxia¹,Cui Jian¹,Ren Xiaodong¹,Zhao Kui¹,Liu Ming²,Wang Shubo³,Yuan Ningyi³,Ding Jianning⁴,Yang Zhou¹^ORCID,Liu Shengzhong(Frank)¹⁵

Affiliation:

1. Key Laboratory of Applied Surface and Colloid Chemistry Ministry of Education Shaanxi Key Laboratory for Advanced Energy Devices Shaanxi Engineering Lab for Advanced Energy Technology Institute for Advanced Energy Materials School of Materials Science and Engineering Shaanxi Normal University Xi'an 710119 China

2. School of Microelectronics and State Key Laboratory for Mechanical Behavior of Materials Xi'an Jiaotong University Xi'an 710049 China

3. School of Materials Science and Engineering Jiangsu Collaborative Innovation Center for Photovoltaic Science and Engineering Jiangsu Province Cultivation Base for State Key Laboratory of Photovoltaic Science and Technology Changzhou University Changzhou 213164 China

4. Micro/Nano Science and Technology Center Jiangsu University Zhenjiang 212013 China

5. Dalian National Laboratory for Clean Energy Dalian Institute of Chemical Physics Chinese Academy of Sciences Dalian 116023 China

Funder

National Key Research and Development Program of China

National Natural Science Foundation of China

Shaanxi Normal University

Higher Education Discipline Innovation Project

Publisher

Wiley

Subject

Industrial and Manufacturing Engineering,Mechanics of Materials,General Materials Science

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