Semiconductor devices “from inside”-Reference-Cited by-同舟云学术

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Semiconductor devices “from inside”

Published:2006-12-06 Issue:4 Volume:22 Page:227-233
ISSN:0161-0457
Container-title:Scanning
language:en
Short-container-title:Scanning

Author:

Mil'shtein S.

Publisher

Wiley

Subject

Instrumentation,Atomic and Molecular Physics, and Optics

Reference19 articles.

1. Technology challenges for integration near and below 0.1μm;Asai;Proc IEEE,1997

2. Secondary electron spectroscopy for microanalysis and defect review;Joy;SPIE Proc Metrol Inspec Process Confer,1999

3. Beam testing of the electrical field in semiconductor devices;Mil'shtein;Microelectronic Eng,1996

4. Measurements of quasi-Fermi energies by scanning electron beam;Mil'shtein;Appl Phys Lett,1997

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Improving FET Switch Linearity;IEEE Transactions on Electron Devices;2007-03

2. Investigation of voltages and electric fields in silicon radiation detectors using a scanning electron microscope;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2005-12

3. Effect of non-abrupt doping profiles on the carrier sheet density in one-side modulation-doped GaAs/AlGaAs quantum wells;physica status solidi (c);2004-08

4. Mapping the potential within a nanoscale undoped GaAs region using a scanning electron microscope;Applied Physics Letters;2004-03-22

5. p-HEMT with tailored field;Microelectronics Journal;2003-05

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