p-HEMT with tailored field-Reference-Cited by-同舟云学术

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p-HEMT with tailored field

Published:2003-05 Issue:5-8 Volume:34 Page:359-361
ISSN:0026-2692
Container-title:Microelectronics Journal
language:en
Short-container-title:Microelectronics Journal

Author:

Mil'shtein S,Ersland P,Somisetty S,Gil C

Publisher

Elsevier BV

Subject

General Engineering

Reference13 articles.

1. A New 50nm n-MOSFET with Side-Gates for Virtual Source-Drain Extensions;Choi;IEEE Trans. Electron. Dev.,2002

2. 50nm MOSFET with Electrical Induced Source/Drain (S/D) Extensions;Han;IEEE Trans. Electron. Dev.,2001

3. RESURF AlGaN/GaN HEMT for High Voltage Power Switching;Karmalkar;IEEE Trans. Electron. Dev.,2001

4. Electron Saturation Velocity Variation in InGaAs and GaAs Channel MODFETs for Gate Lengths to 55Å;De La La Houssaye;IEEE Trans. Electron Dev.,1988

5. Modeling and Simulation of Single and Multiple-Gate 2-D MESFETs;Iniguez;IEEE Trans. Electr. Dev.,1999

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Modeling and Design of Low Threshold Voltage D-mode GaN HEMT;2022 IEEE 31st Microelectronics Design & Test Symposium (MDTS);2022-05-23

2. Field tailored SiC MESFET design and modeling;AIP Conference Proceedings;2013

3. 3D modeling of dual-gate FinFET;Nanoscale Research Letters;2012-11-13

4. Progress of quantum electronics and the future of wireless technologies;Microelectronics Journal;2008-03

5. Improving FET Switch Linearity;IEEE Transactions on Electron Devices;2007-03

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