Effect of non-abrupt doping profiles on the carrier sheet density in one-side modulation-doped GaAs/AlGaAs quantum wells
Author:
Publisher
Wiley
Reference20 articles.
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4. Suppression of impurity interdiffusion in heteroepitaxy by inserting a low-temperature buffer layer in between the epilayer and the substrate
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1. Quasi-stationary states of an electron with linearly dependent effective mass in an open nanostructure within transmission coefficient and S-matrix methods;The European Physical Journal Plus;2018-03
2. Spectrum of Electron in Quantum Well with Continuous Position-Dependent Effective Mass;Nanooptics, Nanophotonics, Nanostructures, and Their Applications;2018
3. Unexpected transition from single to double quantum well potential induced by intense laser fields in a semiconductor quantum well;Journal of Applied Physics;2009-06-15
4. Variational results for electron mobility in modulation-doped In0.53Ga0.47As/InP single symmetric quantum wells;Microelectronics Journal;2005-11
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