Suppression of impurity interdiffusion in heteroepitaxy by inserting a low-temperature buffer layer in between the epilayer and the substrate
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference9 articles.
1. Effect of Annealing and Sulfur Passivation of GaAs Surface in ZnSe/GaAs Heterostructure
2. Reflection high‐energy electron diffraction oscillations from vicinal surfaces—a new approach to surface diffusion measurements
3. Molecular beam epitaxial growth of high‐purity AlGaAs
4. Characterization of ZnSe grown by molecular-beam epitaxy
5. Electrical and Photo-luminescence Properties of ZnSe Thin Films Grown by Molecular Beam Epitaxy: Substrate Temperature Effect
Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Low-Temperature and Metamorphic Buffer Layers;Handbook of Crystal Growth;2015
2. Epitaxial growth of ZnSe on GaAs with the use of the ZnSe compound as the source;Semiconductors;2009-11
3. Effect of non-abrupt doping and interfacial profiles on the carrier sheet density in one-side modulation-doped GaN/AlGaN quantum wells;Brazilian Journal of Physics;2009-04
4. Large depletion region at the epitaxial n-ZnSe/GaAs heterointerface;Semiconductor Science and Technology;2009-02-04
5. MOVPE growth and study of ZnCdSe/ZnSSe MQW structures for green VCSELs;physica status solidi (c);2006-03
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3