A comparative materials study of magnetron ion etched GaAs using Freon-12, SiCl4 and BCl3
Author:
Publisher
Wiley
Subject
Instrumentation,Atomic and Molecular Physics, and Optics
Link
http://onlinelibrary.wiley.com/wol1/doi/10.1002/sca.4950150408/fullpdf
Reference12 articles.
1. Surface and interface damage characterization of reactive ion etched MBE regrown GaAs;Cole;Proc Mat Res Soc Symp,1989
2. Reactive ion etching of GaAs with SiCl4: A residual damage and electrical investigation;Cole;Scanning,1992
3. Raman scattering study of plasma etching damage in GaAs;Kirillov;J Vac Sci Technol,1986
4. Reactive ion etching of GaAs in CCl4-xFx (x = 0,2,4) and mixed CCl4-xFx/Ar discharges;Klinger;J Appl Phys,1983
5. Dry etching induced damage in GaAs investigated using Raman scattering spectroscopy;Lishan;J Vac Sci Technol,1989
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. The formation of boron containing fragment ions from the ionization of BCl3;International Journal of Mass Spectrometry;2004-04
2. The influence of ion energy, ion flux, and etch temperature on the electrical and material quality of GaAs etched with an electron cyclotron resonance source;Journal of Applied Physics;1995-08-15
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