The formation of boron containing fragment ions from the ionization of BCl3
Author:
Publisher
Elsevier BV
Subject
Physical and Theoretical Chemistry,Spectroscopy,Condensed Matter Physics,Instrumentation
Reference39 articles.
1. A comparative materials study of magnetron ion etched GaAs using Freon-12, SiCl4 and BCl3
2. Dry etching characteristics of III?V semiconductors in microwave BCl3 discharges
3. High-temperature kinetic study for the reactive ion etching of InP in BCl3/Ar/O2
4. Plasma etching of III–V semiconductors in BCl3 chemistries: Part I: GaAs and related compounds
5. Smooth and anisotropic reactive ion etching of GaAs slot via holes for monolithic microwave integrated circuits using Cl[sub 2]/BCl[sub 3]/Ar plasmas
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1. Electron ionization of SiCl4;The Journal of Chemical Physics;2011-02-21
2. Electron ionization of methane: The dissociation of the methane monocation and dication;The Journal of Chemical Physics;2011-01-14
3. Electron ionization of acetylene;The Journal of Chemical Physics;2007-11-07
4. An ab initio study of the electronic structure of BCl2+3 and its decomposition pathways;Physical Chemistry Chemical Physics;2006
5. Current literature in mass spectrometry;Journal of Mass Spectrometry;2005
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