Electron ionization of SiCl4
Author:
Publisher
AIP Publishing
Subject
Physical and Theoretical Chemistry,General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3532928
Reference41 articles.
1. Influence of cathode material and SiCl4 gas on inductively coupled plasma etching of AlGaN layers with Cl2∕Ar plasma
2. Characterization of SiCl[sub 4]/N[sub 2] Plasmas
3. Low bias reactive ion etching of GaAs with a SiCl[sub 4]∕N[sub 2]∕O[sub 2] time-multiplexed process
4. Reactive ion etching of zinc oxide (ZnO) in SiCl4 based plasmas
5. Strong white and blue photoluminescence from silicon nanocrystals in SiNxgrown by remote PECVD using SiCl4/NH3
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1. Cu-Si bond and Cl defect synergistical catalysis for SiCl4 dissociation on CuCl2(1 0 0): A DFT study;Applied Surface Science;2021-03
2. Ionization of acetonitrile;International Journal of Mass Spectrometry;2019-04
3. Surface morphology evolution during plasma etching of silicon: roughening, smoothing and ripple formation;Journal of Physics D: Applied Physics;2017-09-15
4. Bimolecular reactions of the dications and trications of atoms and small molecules in the gas-phase;International Reviews in Physical Chemistry;2017-02-06
5. Electron induced inelastic and ionization cross section for plasma modeling;Physics of Plasmas;2016-09
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