Reactive ion etching of GaAs with SiCl4 : A residual damage and electrical investigation
Author:
Publisher
Wiley
Subject
Instrumentation,Atomic and Molecular Physics, and Optics
Link
http://onlinelibrary.wiley.com/wol1/doi/10.1002/sca.4950140106/fullpdf
Reference8 articles.
1. Optimization of reactive ion etching parameters via materials characterization;Cole;Proc Mat Res Soc Symp,1990
2. Surface and interface damage characterization of reactive ion etched MBE regrown GaAs;Cole;Proc Mat Res Soc Symp,1989
3. Raman scattering study of plasma etching damage in GaAs;Kirillov;J Vac Sci Technol,1986
4. Dry etching induced damage in GaAs investigated using Raman scattering spectroscopy;Lishan;J Vac Sci Technol,1989
5. Damage at reactive ion etched MBE regrown GaAs interface;Rossabi;Proc SPIE,1989
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. A surface modification study of InGaP etched with an electron cyclotron resonance source at variable microwave powers;Journal of Applied Physics;1996-03-15
2. The influence of ion energy, ion flux, and etch temperature on the electrical and material quality of GaAs etched with an electron cyclotron resonance source;Journal of Applied Physics;1995-08-15
3. Dry-Etch-induced damage in GaAs investigated via TEM;Proceedings, annual meeting, Electron Microscopy Society of America;1993-08-01
4. A comparative materials study of magnetron ion etched GaAs using Freon-12, SiCl4 and BCl3;Scanning;1993
5. Surface Modification with the SXM’s;Low-Dimensional Electronic Systems;1992
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