Organic-Inorganic Heterojunctions toward High-Performance Ambipolar Field-Effect Transistor Applications-Reference-Cited by-同舟云学术

Organic-Inorganic Heterojunctions toward High-Performance Ambipolar Field-Effect Transistor Applications

Published:2018-06-28 Issue:9 Volume:4 Page:1800211
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv. Electron. Mater.

Author:

Li Molin¹²,Wang Jiawei¹²,Cai Xiaoyong¹,Liu Fengjing¹²,Li Xiaojun¹,Wang Liang¹,Liao Lei³,Jiang Chao¹

Affiliation:

1. CAS Key Laboratory of Standardization and Measurement for Nanotechnology; CAS Center for Excellence in Nanoscience; National Center for Nanoscience and Technology; Beijing 100190 P. R. China

2. College of Materials Science and Opto-Electronic Technology; University of Chinese Academy of Science; No. 19A Yuquan Road Beijing 100049 P. R. China

3. Key Laboratory for Micro-/Nano-Optoelectronic Devices of Ministry of Education; School of Physics & Microelectronics; University of Hunan; Changsha 410082 China

Funder

National Natural Science Foundation of China

“Strategic Priority Research Program” of the Chinese Academy of Sciences

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/aelm.201800211/fullpdf

Reference40 articles.

1. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

2. Present status of amorphous In–Ga–Zn–O thin-film transistors