A Highly Responsive Self-Driven UV Photodetector Using GaN Nanoflowers-Reference-Cited by-同舟云学术

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A Highly Responsive Self-Driven UV Photodetector Using GaN Nanoflowers

Published:2017-04-10 Issue:5 Volume:3 Page:1700036
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv. Electron. Mater.

Author:

Aggarwal Neha¹,Krishna Shibin¹,Sharma Alka²,Goswami Lalit¹,Kumar Dinesh²,Husale Sudhir²,Gupta Govind¹

Affiliation:

1. Advanced Materials and Devices Group; CSIR-National Physical Laboratory (CSIR-NPL); Dr. K. S. Krishnan Road New Delhi 110012 India

2. Quantum Phenomena and Applications; CSIR-National Physical Laboratory (CSIR-NPL); Dr. K. S. Krishnan Road New Delhi 110012 India

Funder

Council of Scientific and Industrial Research

Systems Ltd.

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Reference44 articles.

1. Wide-bandgap semiconductor ultraviolet photodetectors

2. AlxGa1-xN-based back-illuminated solar-blind photodetectors with external quantum efficiency of 89%

3. Enhanced spectral response of an AlGaN-based solar-blind ultraviolet photodetector with Al nanoparticles

4. High gain ultraviolet photodetectors based on AlGaN/GaN heterostructures for optical switching

5. MBE-grown AlGaN/GaN heterostructures for UV photodetectors

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5. Epitaxial Growth of the Large-Scale, Highly-Ordered 3D GaN-Truncated Pyramid Array Toward an Ultrahigh Rejection Ratio and Responsivity Visible-Blind Ultraviolet Photodetection;ACS Applied Materials & Interfaces;2024-07-01

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