Tunneling Spintronics across MgO Driven by Double Oxygen Vacancies-Reference-Cited by-同舟云学术

Tunneling Spintronics across MgO Driven by Double Oxygen Vacancies

Published:2017-05-10 Issue:7 Volume:3 Page:1600390
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv. Electron. Mater.

Author:

Taudul Beata¹,Monteblanco Elmer Nahuel²,Halisdemir Ufuk¹,Lacour Daniel²,Schleicher Filip¹,Montaigne François²,Beaurepaire Eric¹,Boukari Samy¹,Hehn Michel²,Alouani Mébarek¹,Bowen Martin¹

Affiliation:

1. Institut de Physique et Chimie des Matériaux de Strasbourg UMR 7504 CNRS; Université de Strasbourg; 23 Rue du Loess, BP 43 67034 Strasbourg Cedex 2 France

2. Institut Jean Lamour UMR 7198 CNRS; Université de Lorraine; BP 70239 54506 Vandoeuvre les Nancy Cedex France

Funder

Agence Nationale de la Recherche

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Reference48 articles.

1. Tunneling path toward spintronics

2. A new spin on magnetic memories

3. Properties of magnetic tunnel junctions with a MgO/CoFeB/Ta/CoFeB/MgO recording structure down to junction diameter of 11 nm

4. Tunnel magnetoresistance of 604% at 300K by suppression of Ta diffusion in CoFeB∕MgO∕CoFeB pseudo-spin-valves annealed at high temperature

5. Theory of tunneling magnetoresistance of an epitaxial Fe/MgO/Fe(001) junction

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