Excited State Properties of Point Defects in Semiconductors and Insulators Investigated with Time-Dependent Density Functional Theory-Reference-Cited by-同舟云学术

Excited State Properties of Point Defects in Semiconductors and Insulators Investigated with Time-Dependent Density Functional Theory

Author:

Jin Yu¹^ORCID,Yu Victor Wen-zhe²^ORCID,Govoni Marco²³⁴^ORCID,Xu Andrew C.⁴,Galli Giulia¹²⁴^ORCID

Affiliation:

1. Department of Chemistry, University of Chicago, Chicago, Illinois 60637, United States

2. Materials Science Division, Argonne National Laboratory, Lemont, Illinois 60439, United States

3. Department of Physics, Computer Science, and Mathematics, University of Modena and Reggio Emilia, Modena 41125, Italy

4. Pritzker School of Molecular Engineering, University of Chicago, Chicago, Illinois 60637, United States

Funder

Midwest Integrated Center for Computational Materials

Research Computing Center, University of Chicago

National Energy Research Scientific Computing Center

Publisher

American Chemical Society (ACS)

Subject

Physical and Theoretical Chemistry,Computer Science Applications

Link

Reference128 articles.

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