An Optoelectronic Switch Based on Intrinsic Dual Schottky Diodes in Ambipolar MoSe 2 Field‐Effect Transistors-Reference-Cited by-同舟云学术

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An Optoelectronic Switch Based on Intrinsic Dual Schottky Diodes in Ambipolar MoSe 2 Field‐Effect Transistors

Published:2015-10-26 Issue:11 Volume:1 Page:1500215
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv. Electron. Mater.

Author:

Pradhan Nihar R.¹,Lu Zhengguang¹,Rhodes Daniel¹,Smirnov Dmitry¹,Manousakis Efstratios¹²³,Balicas Luis¹

Affiliation:

1. National High Magnetic Field Lab Florida State University 1800 E. Paul Dirac Drive Tallahassee FL 32310 USA

2. Department of Physics Florida State University Tallahassee FL 32306 USA

3. Department of Physics University of Athens, Panepistimioupolis, Zografos GR‐157 84 Athens Greece

Funder

U.S. Army Research Office MURI

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/aelm.201500215

Reference39 articles.

1. Photovoltaic Heterojunctions of Fullerenes with MoS2 and WS2 Monolayers

2. Atomically ThinMoS2: A New Direct-Gap Semiconductor

3. Electrical control of neutral and charged excitons in a monolayer semiconductor

4. Optical generation of excitonic valley coherence in monolayer WSe2

5. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

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1. Tuning the Electronic and Photoelectronic Properties of Two-Dimensional MoSe₂ Thin Films by In Situ V-Doping;The Journal of Physical Chemistry C;2024-01-11

2. Resistive switching transparent SnO2 thin film sensitive to light and humidity;Scientific Reports;2023-11-16

3. Equilibrium and nonequilibrium thermoelectric efficiency of monolayer molybdenum diselenide/gold junctions;Physical Review B;2023-08-25

4. Resistive Switching Transparent SnO2 Thin Film Sensitive to Light and Humidity;2023-08-10

5. Insulator-to-metal phase transition in a few-layered MoSe₂ field effect transistor;Nanoscale;2023

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