Tuning the Electronic and Photoelectronic Properties of Two-Dimensional MoSe<sub>2</sub> Thin Films by In Situ V-Doping-Reference-Cited by-同舟云学术

Tuning the Electronic and Photoelectronic Properties of Two-Dimensional MoSe₂ Thin Films by In Situ V-Doping

Published:2024-01-11 Issue:3 Volume:128 Page:1177-1184
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Li Caimei¹^ORCID,Wang Yutong¹,Yang Heng²,Wang Wen-Jie¹,Lu Fangchao¹^ORCID,Liu Xiaolong²^ORCID,Ding Xun-Lei¹³^ORCID,Deng Jiajun¹

Affiliation:

1. Institute of Clusters and Low Dimensional Nanomaterials, School of Mathematics and Physics, North China Electric Power University, Beijing 102206, China

2. School of New Energy, North China Electric Power University, Beijing 102206, China

3. Hebei Key Laboratory of Physics and Energy Technology, North China Electric Power University, Baoding 071000, China

Funder

National Natural Science Foundation of China

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.jpcc.3c06829

Reference44 articles.

1. Thermally Driven Crossover from Indirect toward Direct Bandgap in 2D Semiconductors: MoSe2 versus MoS2

2. Interfacial Reconstructed Layer Controls the Orientation of Monolayer Transition-Metal Dichalcogenides

3. Tuning the Electronic and Photonic Properties of Monolayer MoS 2 via In Situ Rhenium Substitutional Doping

4. Light-matter interactions in high quality manganese-doped two-dimensional molybdenum diselenide

5. Carbon doping of WS 2 monolayers: Bandgap reduction and p-type doping transport

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Alloy engineered cryotronically stable polymorphic strained photo detector functionalized by palladium enriched tin diselenide nanosheets;Journal of Alloys and Compounds;2024-11