Seamless Fabrication and Threshold Engineering in Monolayer MoS 2 Dual‐Gated Transistors via Hydrogen Silsesquioxane
Author:
Affiliation:
1. Engineering Science and Mechanics Pennsylvania State University University Park PA 16802 USA
2. Material Research Institute Pennsylvania State University University Park PA 16802 USA
Funder
Air Force Office of Scientific Research
National Science Foundation
Publisher
Wiley
Subject
Electronic, Optical and Magnetic Materials
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1002/aelm.201800888
Reference74 articles.
1. Moore's law: past, present and future
2. Device scaling limits of Si MOSFETs and their application dependencies
3. Surface roughness scattering model for arbitrarily oriented silicon nanowires
4. Quantum-Confinement Effect in Ultrathin Si Layer of Silicon-on-Insulator Substrate
5. Performance Upper Limit of sub-10 nm Monolayer MoS2 Transistors
Cited by 13 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. 2D Dual Gate Field‐Effect Transistor Enabled Versatile Functions;Small;2023-09-13
2. A Monolayer MoS2 FET with an EOT of 1.1 nm Achieved by the Direct Formation of a High‐κ Er2O3 Insulator Through Thermal Evaporation;Small;2023-01-11
3. Contact Gating in Dual-Gated WS2 MOSFETs With Semi-Metallic Bi Contacts;IEEE Electron Device Letters;2022-09
4. Emerging reconfigurable electronic devices based on two‐dimensional materials: A review;InfoMat;2022-08-23
5. Dual-Ferroelectric-Coupling-Engineered Two-Dimensional Transistors for Multifunctional In-Memory Computing;ACS Nano;2022-02-11
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3