Elimination of Lateral Resistance and Current Crowding in Large-Area LEDs by Composition Grading and Diffusion-Driven Charge Transport-Reference-Cited by-同舟云学术

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Elimination of Lateral Resistance and Current Crowding in Large-Area LEDs by Composition Grading and Diffusion-Driven Charge Transport

Published:2017-05-02 Issue:6 Volume:3 Page:1700103
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv. Electron. Mater.

Author:

Kivisaari Pyry¹,Kim Iurii²,Suihkonen Sami²,Oksanen Jani³

Affiliation:

1. Division of Solid State Physics and NanoLund; Lund University; P.O. Box 118 SE-22100 Lund Sweden

2. Department of Electronics and Nanoengineering; Aalto University; P.O. Box 13000 FI-00076 Aalto Finland

3. Engineered Nanosystems Group; Aalto University; P.O. Box 12200 FI-00076 Aalto Finland

Funder

Nokia Foundation

Emil Aaltosen Säätiö

Suomen Akatemia

European Research Council

Horizon 2020

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Reference31 articles.

1. History of Gallium–Nitride-Based Light-Emitting Diodes for Illumination

2. Direct Measurement of Auger Electrons Emitted from a Semiconductor Light-Emitting Diode under Electrical Injection: Identification of the Dominant Mechanism for Efficiency Droop

3. Efficiency droop in InGaN/GaN blue light-emitting diodes: Physical mechanisms and remedies

4. Lateral current transport path, a model for GaN-based light-emitting diodes: Applications to practical device designs

5. Current crowding effect on the ideality factor and efficiency droop in blue lateral InGaN/GaN light emitting diodes

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3. Design and Simulation of InGaN-Based Red Vertical-Cavity Surface-Emitting Lasers;Micromachines;2023-12-30

4. Back-Contacted GaInP/GaAs LED Structures by Ex-Situ Dopant Redistribution;IEEE Transactions on Electron Devices;2023-10

5. Back‐Contacted Carrier Injection for Scalable GaN Light Emitters;physica status solidi (a);2021-11-23

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