3D Stackable and Scalable Binary Ovonic Threshold Switch Devices with Excellent Thermal Stability and Low Leakage Current for High‐Density Cross‐Point Memory Applications-Reference-Cited by-同舟云学术

3D Stackable and Scalable Binary Ovonic Threshold Switch Devices with Excellent Thermal Stability and Low Leakage Current for High‐Density Cross‐Point Memory Applications

Published:2019-05-03 Issue:7 Volume:5 Page:1900196
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv. Electron. Mater.

Author:

Yoo Jongmyung¹^ORCID,Kim Seong Hun²,Chekol Solomon Amsalu¹,Park Jaehyuk¹,Sung Changhyuck¹,Song Jeonghwan¹,Lee Donghwa²,Hwang Hyunsang¹^ORCID

Affiliation:

1. Center for Single Atom‐based Semiconductor Device, and Department of Materials Science and EngineeringPohang University of Science and Technology (POSTECH) Pohang 37673 Republic of Korea

2. Department of Materials Science and Engineering and Division of Advanced Materials SciencePohang University of Science and Technology (POSTECH) Pohang 37673 Republic of Korea

Funder

National Research Foundation of Korea

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/aelm.201900196

Reference36 articles.

1. Nanoionics-based resistive switching memories

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3. High switching endurance in TaOx memristive devices