Low-Temperature-Processed SiO x One Diode-One Resistor Crossbar Array and Its Flexible Memory Application-Reference-Cited by-同舟云学术

Low-Temperature-Processed SiO x One Diode-One Resistor Crossbar Array and Its Flexible Memory Application

Published:2018-04-30 Issue:6 Volume:4 Page:1700665
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv. Electron. Mater.

Author:

Yoon Jongwon¹,Ji Yongsung¹,Lee Seoung-Ki²,Hyon Jinho³,Tour James M.¹³⁴^ORCID

Affiliation:

1. Department of Chemistry; Rice University; 6100 Main Street Houston TX 77005 USA

2. Applied Quantum Composites Research Center; Institute of Advanced Composite Materials; Korea Institute of Science and Technology; San 101 Eunha-ri, Bongdong-eup Wanju-gun Jeollabuk-do 55324 Republic of Korea

3. Department of Materials Science and NanoEngineering; Rice University; 6100 Main Street Houston TX 77005 USA

4. Department of Computer Science; Smalley-Curl Institute and the NanoCarbon Center; Rice University; 6100 Main Street Houston TX 77005 USA

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Reference37 articles.

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5. Complementary resistive switches for passive nanocrossbar memories

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