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Collective Structural Relaxation in Phase-Change Memory Devices

Published:2018-07-16 Issue:9 Volume:4 Page:1700627
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv. Electron. Mater.

Author:

Le Gallo Manuel¹^ORCID,Krebs Daniel¹,Zipoli Federico¹,Salinga Martin¹²^ORCID,Sebastian Abu¹

Affiliation:

1. IBM Research - Zurich; 8803 Rüschlikon Switzerland

2. RWTH Aachen; 52074 Aachen Germany

Funder

FP7 People: Marie-Curie Actions

European Research Council

German Science Foundation

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/aelm.201700627/fullpdf

Reference63 articles.

1. Memory leads the way to better computing

2. Phase-Change Memory—Towards a Storage-Class Memory

3. Phase-change random access memory: A scalable technology

4. Recent Progress in Phase-Change_newline Memory Technology

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