Defects in Single Crystalline Ammonothermal Gallium Nitride-Reference-Cited by-同舟云学术

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Defects in Single Crystalline Ammonothermal Gallium Nitride

Published:2017-03-10 Issue:6 Volume:3 Page:1600496
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv. Electron. Mater.

Author:

Suihkonen Sami¹,Pimputkar Siddha²,Sintonen Sakari³,Tuomisto Filip⁴

Affiliation:

1. Department of Electronics and Nanoengineering; Aalto University; P.O. Box 13500 ,FI-0076 Aalto Finland

2. Department of Materials Science and Engineering; Center for Photonics and Nanoelectronics; 5 East Packer Ave Bethlehem PA 18015 USA

3. Leibniz Institute for Crystal Growth; 12489 Berlin Germany

4. Department of Applied Physics; Aalto University; P.O. Box 15100 ,FI-0076 Aalto Finland

Funder

Suomen Akatemia

Magnus Ehrnroothin Säätiö

Solid State Lighting and Energy Electronics Center, University of California Santa Barbara

Materials Science and Engineering Department at Lehigh University

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Reference128 articles.

1. Prospects for LED lighting

2. Group III-nitride lasers: a materials perspective

3. Lateral and Vertical Transistors Using the AlGaN/GaN Heterostructure

4. Curvature and bow of bulk GaN substrates

5. Metal organic vapour phase epitaxy of GaN and lateral overgrowth

Cited by 45 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Ammonothermal Crystal Growth of Functional Nitrides for Semiconductor Devices: Status and Potential;Materials;2024-06-25

2. Investigation into the impact of bulk defects in the drift layer on the electrical properties of GaN-based trench Schottky barrier diodes;Japanese Journal of Applied Physics;2024-05-01

3. Improved midgap recombination lifetimes in GaN crystals grown by the low-pressure acidic ammonothermal method;Applied Physics Letters;2024-04-29

4. Non‐destructive and deep learning‐enhanced characterization of 4H‐SiC material;Aggregate;2024-02-23

5. Perspective on defect characterization in semiconductors by positron annihilation spectroscopy;Journal of Applied Physics;2024-01-23

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