Highly Improved Switching Properties in Flexible Aluminum Oxide Resistive Memories Based on a Multilayer Device Structure
Author:
Affiliation:
1. Photo‐Electronic Hybrids Research CenterKorea Institute of Science and Technology Seoul 02792 Republic of Korea
2. School of Chemical and Biological EngineeringSeoul National University Seoul 08826 Republic of Korea
Funder
Korea Institute of Science and Technology
Publisher
Wiley
Subject
Electronic, Optical and Magnetic Materials
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1002/aelm.201800355
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