How Do Contact and Channel Contribute to the Dirac Points in Graphene Field-Effect Transistors?-Reference-Cited by-同舟云学术

How Do Contact and Channel Contribute to the Dirac Points in Graphene Field-Effect Transistors?

Published:2018-06-28 Issue:8 Volume:4 Page:1800158
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv. Electron. Mater.

Author:

Peng Song-ang¹²^ORCID,Jin Zhi¹,Zhang Dayong¹²,Shi Jingyuan¹,Niu Jiebin²,Huang Xinnan¹,Yao Yao¹,Zhang Yanhui³,Yu Guanghui³

Affiliation:

1. High-Frequency High-Voltage Device and Integrated Circuits R&D Center; Institute of Microelectronics; Chinese Academy of Sciences; Beijing 100029 China

2. Key Laboratory of Microelectronic Devices & Integrated Technology; Institute of Microelectronics; Chinese Academy of Sciences; Beijing 100029 China

3. State Key Laboratory of Functional Material for Informatics; Shanghai Institute of Microsystem and Information Technology; Chinese Academy of Sciences; Shanghai 200050 China

Funder

National Natural Science Foundation of China

Common information system equipment pre-research special technology project

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/aelm.201800158/fullpdf

Reference37 articles.

1. Electric Field Effect in Atomically Thin Carbon Films

2. Approaching ballistic transport in suspended graphene