Origin of the Threshold Voltage Shift in a Transistor with a 2D Electron Gas Channel at the Al 2 O 3 /SrTiO 3 Interface-Reference-Cited by-同舟云学术

Origin of the Threshold Voltage Shift in a Transistor with a 2D Electron Gas Channel at the Al 2 O 3 /SrTiO 3 Interface

Published:2020-05-08 Issue:6 Volume:6 Page:1901286
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv. Electron. Mater.

Author:

Moon Taehwan¹,Lee Hyun Jae¹,Hyun Seung Dam¹,Kim Baek Su¹,Kim Ho Hyun¹,Hwang Cheol Seong¹^ORCID

Affiliation:

1. Department of Materials Science and Engineering and Inter‐University Semiconductor Research CenterSeoul National University Seoul 08826 Republic of Korea

Funder

Samsung

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/aelm.201901286

Reference28 articles.

1. A high-mobility electron gas at the LaAlO3/SrTiO3 heterointerface

2. Tunable Quasi-Two-Dimensional Electron Gases in Oxide Heterostructures

3. Creation of a two-dimensional electron gas at an oxide interface on silicon

4. High Mobility inLaAlO3/SrTiO3Heterostructures: Origin, Dimensionality, and Perspectives

5. Controlling the density of the two-dimensional electron gas at the SrTiO3/LaAlO3interface

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